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K4113 - Field Effect Transistor Silicon N Channel MOS Type

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Part number K4113
Manufacturer Toshiba
File Size 210.29 KB
Description Field Effect Transistor Silicon N Channel MOS Type
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Full PDF Text Transcription for K4113 (Reference)

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2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV) 2SK4113 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) ...

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ator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 2.0 (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 A (VDS = 720 V) • Enhancement mode: Vth = 2.0~4.