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K4111. For precise diagrams, and layout, please refer to the original PDF.
2SK4111 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4111 Switching Regulator Applications Unit: mm • • • • Low drain-source ON resistance: RDS...
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ator Applications Unit: mm • • • • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 10 40 45 363 10 4.
K4111 Datasheet
