Datasheet4U Logo Datasheet4U.com

K1827 - 2SK1827

📥 Download Datasheet

Full PDF Text Transcription for K1827 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K1827. For precise diagrams, and layout, please refer to the original PDF.

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1827 High Speed Switching Applications Analog Switch Applications · 4 V gate drive · Low threshold voltage: ...

View more extracted text
Analog Switch Applications · 4 V gate drive · Low threshold voltage: Vth = 0.8~2.5 V · High speed · Enhancement-mode · Small package Marking Equivalent Circuit 2SK1827 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range VDS VGSS ID PD Tch Tstg 50 10 50 100 150 -55~150 Note: This transistor is electrostatic sensitive device. Please handle with caution. Unit V V mA mW °C °C JEDEC ― JEITA SC-70 TOSHIBA 2-2E1E Weight: 0.006 g (typ.