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K1826. For precise diagrams, and layout, please refer to the original PDF.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1826 High Speed Switching Applications Analog Switch Applications · 4 V gate drive · Low threshold voltage: ...
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Analog Switch Applications · 4 V gate drive · Low threshold voltage: Vth = 0.8~2.5 V · High speed · Enhancement-mode · Small package Marking Equivalent Circuit 2SK1826 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range VDS VGSS ID PD Tch Tstg 50 10 50 200 150 -55~150 Note: This transistor is electrostatic sensitive device. Please handle with caution. Unit V V mA mW °C °C JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1F Weight: 0.012 g (typ.
K1826 Datasheet
