Datasheet4U Logo Datasheet4U.com

GT60PR21 - Silicon N-Channel IGBT

Key Features

  • (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.16 µs (typ. ) (IC = 60 A) FWD trr = 0.60 µs (typ. ) (IF = 15 A) (5) Low saturation voltage: VCE(sat) = 2.0 V (typ. ) (IC = 60 A) (6) High junction temperature: Tj = 175  (max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter Start of commercial production 2012-03 1 2014-01-07 Rev.2.0 GT60PR21 4.

📥 Download Datasheet

Datasheet Details

Part number GT60PR21
Manufacturer Toshiba
File Size 219.40 KB
Description Silicon N-Channel IGBT
Datasheet download datasheet GT60PR21 Datasheet

Other Datasheets by Toshiba

Part Number Description
GT60J321 Silicon N-Channel IGBT
GT60J323H Silicon N-Channel IGBT
GT60M322 Silicon N-Channel IGBT
GT60M323 Silicon N-Channel IGBT
GT60M324 Silicon N-Channel IGBT
GT60N323 Silicon N-Channel IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Discrete IGBTs Silicon N-Channel IGBT GT60PR21 GT60PR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application. 2. Features (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.16 µs (typ.) (IC = 60 A) FWD trr = 0.60 µs (typ.) (IF = 15 A) (5) Low saturation voltage: VCE(sat) = 2.0 V (typ.) (IC = 60 A) (6) High junction temperature: Tj = 175  (max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter Start of commercial production 2012-03 1 2014-01-07 Rev.2.0 GT60PR21 4.