GT60J323H - Silicon N-Channel IGBT

Toshiba

Datasheet Details

Part number	GT60J323H
Manufacturer	Toshiba
File Size	234.69 KB
Description	Silicon N-Channel IGBT
Datasheet	GT60J323H Datasheet

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GT60J323H TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323H Current Resonance Inverter Switching Application Induction Heating Cooking Appliances Induction Heating Appliances • • • • • • Enhancement mode type High speed : tf = 0.12 μs (typ.) (IC = 60A) Low saturation voltage: VCE (sat) = 2.1 V (typ.