2SC2178 - Silicon NPN Transistor

Toshiba

Key Features

: . Output Power : P =15W (Min. ) ( f=175MHz, VCC =12.5V, Pi=1.3W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=15V, Pi=1.3W, f=175MHz Unit in mm.

2SC2178 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC2178
Manufacturer	Toshiba
File Size	65.45 KB
Description	Silicon NPN Transistor
Datasheet	2SC2178 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SC2101	Silicon NPN POWER TRANSISTOR	HGSemi
2SC2120	TRANSISTOR	Toshiba Semiconductor
2SC2120	NPN Transistor	JIANGSU CHANGJIANG
2SC2120	NPN Plastic Encapsulated Transistor	SeCoS
2SC2120	Silicon NPN Transistor	INCHANGE

Other Datasheets by Toshiba

Part Number	Description
2SC2173	Silicon NPN Transistor
2SC2101	Silicon NPN POWER TRANSISTOR
2SC2102	SILICON NPN TRANSISTOR
2SC2103A	SILICON NPN TRANSISTOR
2SC2104	Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SILICON NPN EPITAXIAL PLANAR TYPE 2SC2178 VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P =15W (Min.) ( f=175MHz, VCC =12.5V, Pi=1.3W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=15V, Pi=1.