2SC2173 - Silicon NPN Transistor

Toshiba

Key Features

. Output Power : P =25W(Min. ) (f=470MHz, VCC=12.6V, Pi=10W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V CC=12.6V, Pi=10W, f=470MHz Unit in mm.

2SC2173 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC2173
Manufacturer	Toshiba
File Size	62.13 KB
Description	Silicon NPN Transistor
Datasheet	2SC2173 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON NPN EPITAXIAL PLANAR TYPE V A UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES . Output Power : P =25W(Min.) (f=470MHz, VCC=12.6V, Pi=10W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V CC=12.6V, Pi=10W, f=470MHz Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range v CB0 v CE0 v EB0 ic Tstg ELECTRICAL CHARACTERISTICS (Ta=25 °C) 35 3.5 50 175 -65 -175 JEDEC 1. EMITTER 2. BASE 3. EMITTER 4. COLLECTOR TOSHIBA 2 — 10 01 Mounting Kit No, AC57 Weight : 3.