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2SC1195 - SILICON NPN TRANSISTOR

Key Features

  • High Voltage : VCEO=200V.
  • Large Collector Current : Ic=2.5A Wide Safe Operating Area.

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Datasheet Details

Part number 2SC1195
Manufacturer Toshiba
File Size 82.13 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet 2SC1195 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SC1195 REGULATOR APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High Voltage : VCEO=200V • Large Collector Current : Ic=2.5A Wide Safe Operating Area. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (T C =25°C) Junction Temperature Storage Temperature Range SYMBOL v CBO v CEO V EBO ic IE pc T J T stg RATING 200 200 5 2.5 -2.5 100 150 -65 ^ 150 UNIT V V V A A W °C °c 1. BASE 2. EMITTER COLLECTOR (CASE) JEDEC TO-3 TC-3, TB-3 TOSHIBA 2-21A1A Mounting kit No. AC73 Weight : 12.