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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1102
DESCRIPTION ·With TO-66 package ·High Voltage ·High transistor frequency ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·Designed for use in color TV video output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO IC PC TJ Tstg
Emitter-Base Voltage
Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature
Storage Temperature Range
5
V
50
mA
11
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 11.36 ℃/W
isc website：www.iscsemi.
2SC1102 Datasheet
