TPCF8305 - MOSFET

Product Overview

Toshiba Semiconductor

Part number	TPCF8305
Manufacturer	Toshiba Semiconductor
File Size	238.44 KB
Description	MOSFET
Datasheet	TPCF8305 Datasheet
Additional preview pages of the TPCF8305 datasheet.

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 47 mΩ (typ. ) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit 1: Source1 2: Gate1 3: Source2 4: Gate2 5, 6: Drain2 7, 8: Drain1 VS-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain.

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Published: Aug 27, 2014 |