TPCF8105 - Field Effect Transistor

Product Overview

Toshiba

Part number	TPCF8105
Manufacturer	Toshiba
File Size	249.88 KB
Description	Field Effect Transistor
Datasheet	TPCF8105 Datasheet
Additional preview pages of the TPCF8105 datasheet.

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ. ) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.5 mA) 3. Packaging and Internal Circuit 5: Source 4: Gate 1, 2, 3, 6, 7, 8: Drain VS-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain curr.

📁 Similar Datasheet

Other Datasheets by Toshiba

Published: Nov 11, 2013 |