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TK55D10J1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ)
TK55D10J1
Switching Regulator Applications
• High-Speed switching • Low gate charge: Qg = 110 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 8.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 110 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
10.0±0.3 9.5±0.2
A Ф3.65±0.2
0.6±0.1
3.2 2.8
15.0±0.3
9.0
1.1±0.15
0.75±0.25
2.8Max. 12.8±0.
TK55D10J1 Datasheet
