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TK50X15J1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ)
TK50X15J1
DC-DC Converters
• Low drain-source ON-resistance: RDS (ON) = 22 mΩ (typ.) • High forward transfer admittance: |Yfs| = 90 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 150 V) • Enhancement mode: Vth = 2.0 to 4.
TK50X15J1 Datasheet
