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TC7SZ125AFE - CMOS Digital Integrated Circuit Silicon Monolithic

Key Features

  • High output drive: ±24 mA (min) @VCC = 3 V Super high speed operation: tpd 2.6 ns (typ. ) @VCC = 5 V, 50pF Operation voltage range: VCC (opr) = 1.8~5.5 V Latch-up performance: ±500 mA or more ESD performance: ±200 V or more (JEITA) ±2000 V or more (MIL) Power down protection is provided on all inputs and outputs. Matches the performance of TC74LCX series when operated at 3.3 V VCC. Weight: 0.003 g (typ. ) Marking Type name Pin Assignment (top view) G 1.

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Datasheet Details

Part number TC7SZ125AFE
Manufacturer Toshiba
File Size 169.27 KB
Description CMOS Digital Integrated Circuit Silicon Monolithic
Datasheet download datasheet TC7SZ125AFE Datasheet

Full PDF Text Transcription for TC7SZ125AFE (Reference)

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TC7SZ125AFE www.DataSheet4U.com TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ125AFE Dual Bus Buffer 3-State Output Features · · · · · · · High output d...

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FE Dual Bus Buffer 3-State Output Features · · · · · · · High output drive: ±24 mA (min) @VCC = 3 V Super high speed operation: tpd 2.6 ns (typ.) @VCC = 5 V, 50pF Operation voltage range: VCC (opr) = 1.8~5.5 V Latch-up performance: ±500 mA or more ESD performance: ±200 V or more (JEITA) ±2000 V or more (MIL) Power down protection is provided on all inputs and outputs. Matches the performance of TC74LCX series when operated at 3.3 V VCC. Weight: 0.003 g (typ.