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SSM6N29TU
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM6N29TU
High-Speed Switching Applications
• • • 1.8 V drive N-ch 2-in-1 Low ON-resistance: Ron = 235 mΩ (max) (@VGS = 1.8 V) Ron = 178 mΩ (max) (@VGS = 2.5 V)
0.65 0.65 2.0±0.1 1.3±0.1 2.1±0.1 1.7±0.1 +0.1 0.3-0.05
Unit V μA μA V S mΩ pF pF pF ns V
Unit: mm
Ron = 143 mΩ (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25 °C) (Q1 , Q2 Common)
Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 ± 12 0.8 1.6 500 150 − 55 to 150 Unit V V A mW °C °C
1 2 3
6 5 4
0.7±0.05
Using continuously under heavy loads (e.g.
SSM6N29TU Datasheet
