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SSM6N25TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
SSM6N25TU
High Speed Switching Applications
• Optimum for high-density mounting in small packages
• Low on-resistance:
Ron = 395mΩ (max) (@VGS = 1.8 V) Ron = 190mΩ (max) (@VGS = 2.5 V) Ron = 145mΩ (max) (@VGS = 4.0 V)
Unit: mm 2.1±0.1 1.7±0.1
+0.1 0.3-0.05
2.0±0.1 1.3±0.1 0.65 0.65
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
1
6
2
5
Characteristics
Symbol
Rating
Unit
3
4
+0.06 0.16-0.05
0.7±0.05
Drain-Source voltage
VDS
20
V
Gate-Source voltage
VGSS
± 12
V
Drain current
DC Pulse
Drain power dissipation
Channel temperature
ID
0.5
A
IDP
1.5
PD
500
mW
(Note 1)
Tch
150
°C
1.Source1 2.Gate1 3.Drain2
4.Source2 5.Gate2 6.
SSM6N25TU Datasheet
