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K3316. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.net 2SK3316 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3316 Switching Regulator Applications z Fast reverse recovery time z Lo...
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316 Switching Regulator Applications z Fast reverse recovery time z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : trr = 60 ns (typ.) : RDS (ON) = 1.6 Ω (typ.) : |Yfs| = 3.8 S (typ.) Unit: mm z Built-in high-speed free-wheeling diode : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 35 180 5 3.
K3316 Datasheet
