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K3310. For precise diagrams, and layout, please refer to the original PDF.
2SK3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3310 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) =...
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tor Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.3 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) • Enhancement model: Vth = 3.0~5.
K3310 Datasheet
