nted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for auto.
Full PDF Text Transcription for K30A06J3A (Reference)
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K30A06J3A. For precise diagrams, and layout, please refer to the original PDF.
TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅢ) TK30A06J3A Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS ...
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Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) z High forward transfer admittance: |Yfs| = 34 S (typ.) z Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) z Enhancement mode: Vth = 1.3 to 2.
K30A06J3A Datasheet
