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K3078. For precise diagrams, and layout, please refer to the original PDF.
2SK3078 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3078 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) (Note)The TOSHIBA products listed in this document ar...
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PLICATIONS (GSM) (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. Unit: mm z Output Power z Gain z Drain Efficiency : PO = 27.0 dBmW (Min.) : GP = 12.5 dB (Min.) : ηD = 46% (Typ.