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K13A25D - TK13A25D

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ. ) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK13A25D TO-220SIS 1: Gate (G) 2: Drain (D) 3: Source (S) 1 2011-10-10 Rev.2.0 TK13A25D 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (p.

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Full PDF Text Transcription for K13A25D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K13A25D. For precise diagrams, and layout, please refer to the original PDF.

MOSFETs Silicon N-Channel MOS (π-MOS) TK13A25D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ.) (2)...

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atures (1) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK13A25D TO-220SIS 1: Gate (G) 2: Drain (D) 3: Source (S) 1 2011-10-10 Rev.2.0 TK13A25D 4.

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