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K1358 - Silicon N-Channel MOSFET

Key Features

  • Low Drain-Source ON Resistance - RDS(ON) = 1.1Ω (Typ. ).
  • High Forward Transfer Admittance - Yfs = 4.0S (Typ. ).
  • Low Leakage Current - IDSS = 300µA (Max. ) @ VDS = 720V.
  • Enhancement-Mode - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA Absolute Maximum Ratings (Ta = 25°C).

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Datasheet Details

Part number K1358
Manufacturer Toshiba
File Size 568.20 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet K1358 Datasheet

Full PDF Text Transcription for K1358 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K1358. For precise diagrams, and layout, please refer to the original PDF.

TOSHIBA Discrete Semiconductors Field Effect Transistor Silicon N Channel MOS Type (π-MOS II.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Appl...

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Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance - RDS(ON) = 1.1Ω (Typ.) • High Forward Transfer Admittance - Yfs = 4.0S (Typ.) • Low Leakage Current - IDSS = 300µA (Max.) @ VDS = 720V • Enhancement-Mode - Vth = 1.5 ~ 3.

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