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K118. For precise diagrams, and layout, please refer to the original PDF.
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications 2SK118 Unit: mm • Hig...
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Converter and Condenser Microphone Applications 2SK118 Unit: mm • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range VGDS IG PD Tj Tstg −50 10 100 125 −55~125 V mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of JEDEC ― high temperature/current/voltage and the significant change in temperature, etc.
K118 Datasheet
