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K117. For precise diagrams, and layout, please refer to the original PDF.
2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications • • • • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V,...
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ier Applications • • • • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) High breakdown voltage: VGDS = −50 V Low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ) High input impedance: IGSS = −1 nA (max) (VGS = −30 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating −50 10 300 125 −55~125 Unit V mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of JEDEC TO-92 high temperature/current/voltage and the significant change i
K117 Datasheet
