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JDV2S26FS
TOSHIBA Diode Silicon Epitaxial Planar Type
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JDV2S26FS
VCO for UHF Band Radio
• • • High capacitance ratio: C1V/C4V =2.9 (typ.) Low series resistance: rs = 0.4 Ω (typ.) This device is suitable for use in small tuners.
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Unit: mm
0.6±0.05 0.1 0.8±0.05
A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 −55~150 Unit V °C °C
0.07
M
0.1
A
0.2 ±0.05
0.1±0.05
0.48 +0.02 -0.03
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
JDV2S26FS Datasheet
