J412
2SJ412
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
2SJ412
DC-DC Converter, Relay Drive and Motor Drive Applications
- 4-V gate drive
- Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.)
- High forward transfer admittance: |Yfs| = 7.7 S (typ.)
- Low leakage current: IDSS =
- 100 μA (max) (VDS =
- 100 V)
- Enhancement mode: Vth =
- 0.8 to
- 2.0 V (VDS =
- 10 V, ID =
- 1 m A)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
IAR EAR Tch Tstg
- 100
- 100 ±20
- 16
-...
