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J414 - P-Channel 60V MOSFET

Features

  • Trench Power MOSFET 100.
  • % UIS Tested.

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Datasheet Details

Part number J414
Manufacturer VBsemi
File Size 195.90 KB
Description P-Channel 60V MOSFET
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    J414-VB J414-VB Datasheet P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.064 at V GS = - 10 V 0.077 at VGS = - 4.5 V ID (A) - 30 - 28 Qg (Typ) 12 FEATURES • Trench Power MOSFET 100 • % UIS Tested APPLICATIONS • Load Switch www.VBsemi.com S D2PAK (TO-263) G G D S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C ID - 30 - 20 Pulsed Drain Current IDM - 90 A Continuing Source Current (Diode Conduction) IS - 28 Avalanche Current IAS - 31 Single Pulse Avalanche Energy Maximum Power Dissipation L = 0.1 mH EAS TC = 25 °C TA = 25 °C PD 7.
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