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HN7G09FE
TOSHIBA Multichip Discrete Device
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HN7G09FE
Unit: mm
Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications
Q1 (transistor): RN1104F equivalent Q2 (MOSFET): SSM3K15FS equivalent
Q1 (Transistor) Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating 50 50 10 100 Unit V V V mA
Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Gate-source voltage DC drain current DC Pulse Symbol VDS VGSS ID IDP Rating 20 ± 20 100 200 Unit V V mA
1. 2. 3. 4. 5. 6.
EMITTER BASE DRAIN SOURCE GATE COLLECTOR
JEDEC JEITA TOSHIBA
― ― 2-2J1A
Weight:0.
HN7G09FE Datasheet
