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HN7G02FE
TOSHIBA Multichip Discrete Device
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HN7G02FE
Unit: mm
Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications
Q1 (transistor): RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent
Q1 (Transistor) Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −5 −100 Unit V V V mA
1. 2. 3. 4. 5. 6.
EMITTER BASE DRAIN SOURCE GATE COLLECTOR
Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Gate-source voltage DC drain current Symbol VDS VGSS ID Rating 20 10 50 Unit V V mA
JEDEC JEITA TOSHIBA
― ― 2-2N1F
Weight:0.003g (typ.
HN7G02FE Datasheet
