HN1K06FU - TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Toshiba

Datasheet Details

Part number	HN1K06FU
Manufacturer	Toshiba
File Size	126.43 KB
Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Datasheet	HN1K06FU Datasheet

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Other Datasheets by Toshiba

Part Number	Description
HN1K02FU	N CHANNEL MOS TYPE (HIGH SPEED SWITCHING/ ANALOG SWITCH APPLICATIONS)
HN1K03FU	N CHANNEL MOS TYPE (HIGH SPEED SWITCHING/ ANALOG SWITCH APPLICATIONS)
HN1K04FU	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN1K05FU	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN1J02FU	P CHANNEL MOS TYPE (HIGH SPEED SWITCHING/ ANALOG SWITCH APPLICATIONS)

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HN1K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K06FU High Speed Switching Applications Analog Switch Applications Unit: mm · · · · High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.5 to 1.5 V Switching speed is fast. Suitable for high-density mounting because of a compact package Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note) Tch Tstg Rating 20 10 100 200 150 -55 to 150 Unit V V mA mW °C °C JEDEC JEITA TOSHIBA Weight: 6.

Published: Mar 26, 2005 |