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HN1K04FU - TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

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Datasheet Details

Part number HN1K04FU
Manufacturer Toshiba
File Size 124.13 KB
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Datasheet download datasheet HN1K04FU Datasheet

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HN1K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K04FU High Speed Switching Applications Analog Switch Applications Unit: mm · · · · High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.8 to 2.5 V Switching speed is fast. Suitable for high-density mounting because of a compact package. Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note) Tch Tstg Rating 50 10 50 200 150 -55 to 150 Unit V V mA mW °C °C JEDEC JEITA TOSHIBA Weight: 6.
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