2SK2968 - N-Channel MOSFET

Toshiba

Datasheet Details

Part number	2SK2968
Manufacturer	Toshiba
File Size	247.71 KB
Description	N-Channel MOSFET
Datasheet	2SK2968 Datasheet

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2SK2968 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2968 DC−DC Converter, Relay Drive and Motor Drive Applications l Low drain−source ON resistance l High forward transfer admittance : RDS (ON) = 1.05 Ω (typ.) : |Yfs| = 7.6 S (typ.) Unit: mm l Low leakage current : IDSS = 100 µA (max) (VDS = 720 V) l Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 10 30 150 810 10 15 150 −55~150 Unit V V V A A W mJ A mJ °C °C 1. GATE 2. DRAIN (HEAT SINK) 3.