2SK211
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
FM Tuner Applications VHF Band Amplifier Applications
Unit: mm
- Low noise figure: NF = 2.5d B (typ.) (f = 100 MHz)
- High forward transfer admitance: |Yfs| = 9 m S (typ.)
- Extremely low reverse transfer capacitance: Crss = 0.1 p F (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDO IG PD Tj Tstg
Rating
- 18 10 150 125
- 55~125
Unit
V m A m W °C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability...
