2SK210
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
FM Tuner Applications VHF Band Amplifier Applications
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- High power gain: GPS = 24d B (typ.) (f = 100 MHz) Low noise figure: NF = 1.8d B (typ.) (f = 100 MHz) High forward transfer admittance: |Yfs| = 7 m S (typ.) (f = 1 k Hz) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating
- 18 10 100 125
- 55~125 Unit V m A m W °C °C
Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in JEITA SC-59 temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-3F1C operating temperature/current/voltage, etc.) are within the Weight: 0.012 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon...
