2SJ516
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π- MOSV)
Chopper Regulator, DC- DC Converter and Motor Drive Applications
Unit: mm z Low drain-source ON resistance : RDS (ON) = 0.6 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.3 S (typ.) z Low leakage current : IDSS =
- 100 μA (max) (VDS =
- 250 V) z Enhancement mode : Vth =
- 1.5 to
- 3.5 V (VDS =
- 10 V, ID =
- 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain- source voltage
Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalenche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
IAR EAR Tch Tstg
- 250
- 250 ±20
- 6.5
- 13
- 6.5 3.5 150
- 55 to 150
V V V A A W m J
A m J °C...
