2SJ512
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- π- MOSV)
Chopper Regulator, DC- DC Converter and Motor Drive Applications
Unit: mm l Low drain- source ON resistance : RDS (ON) = 1.0 Ω (typ.) l High forward transfer admittance : |Yfs| = 3.7 S (typ.) l Low leakage current : IDSS =
- 100 µA (max) (VDS =
- 250 V) l Enhancement- mode : Vth =
- 1.5~- 3.5 V (VDS =
- 10 V, ID =
- 1 m A)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain- source voltage
Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalenche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS VDGR VGSS
ID IDP PD
IAR EAR Tch Tstg
Rating
- 250
- 250 ±20
- 5
- 20 30
- 5 3.0 150
- 55~150
Unit
V V V A A W m J
A m J °C °C
JEDEC
―
JEITA
SC-67...
