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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ345
High Speed Switching Applications Analog Switch Applications
• Low threshold voltage: Vth = −0.5~−1.5 V • High speed • Small package • Complementary to 2SK1828
Marking
Equivalent Circuit
2SJ345
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range
Symbol
VDS VGSS
ID PD Tch Tstg
Rating
−20 −7 −50 200 150 −55~150
Unit
V V mA mW °C °C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.