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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ342
High Speed Switching Applications Analog Switch Applications
• Low threshold voltage: Vth = −0.8~−2.5 V • High speed • Enhancement-mode • Small package • Complementary to 2SK1825
Equivalent Circuit
2SJ342
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range
Symbol
VDS VGSS
ID PD Tch Tstg
Rating
−50 −7 −50 300 150 −55~150
Unit
V V mA mW °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-4E1E
Weight: 0.13 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
2SJ342 Datasheet
