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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ148
High Speed Switching Applications Analog Switch Applications Interface Applications
2SJ148
Unit: mm
• Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Yfs| = 100 mS (min) • Low on resistance: RDS (ON) = 1.3 Ω (typ.) • Enhancement-mode
• Complementary to 2SK982
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS −60 V
Gate-source voltage
VGSS ±20 V
Drain current
DC Pulse
ID
−200
mA
IDP −800
JEDEC
TO-92
Drain power dissipation (Ta = 25°C)
PD
400 mW
JEITA
SC-43
Channel temperature
Tch
150 °C
TOSHIBA
2-5F1H
Storage temperature range
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g.
2SJ148 Datasheet
