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2SJ144 - P-Channel MOSFET

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Part number 2SJ144
Manufacturer Toshiba
File Size 532.06 KB
Description P-Channel MOSFET
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2SJ144 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ144 Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications Unit: mm • High breakdown voltage: VGDS = 50 V (min) • High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) • Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = −5 mA) • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating 50 −10 100 125 −55~125 Unit V mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
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