TSM1N60 - N-Channel Power Enhancement Mode MOSFET

Product Overview

Taiwan Semiconductor

Part number	TSM1N60
Manufacturer	Taiwan Semiconductor
File Size	205.94 KB
Description	N-Channel Power Enhancement Mode MOSFET
Datasheet	TSM1N60 Datasheet
Additional preview pages of the TSM1N60 datasheet.

The TSM1N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. IDSS and VDS(on) specified at elevated temperature Block Diagram Ordering Information Part No. TSM1N60CP TSM1N60CH Packing Tape & Reel Tube Package TO-252 TO-251 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Cur.

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Published: Feb 22, 2008 |