TSM1N45D - 450V N-Channel Power MOSFET

The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process.

• Low gate charge @ typical 6.5nC Low Crss @ typical 6.5pF Avalanche energy specified Improved dv/dt capability Gate-Source Voltage ±50V guaranteed Block Diagram Ordering Information Part No. TSM1N45DCS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Drain to Source Aval.