TSM9966D - 20V Dual N-Channel MOSFET

Taiwan Semiconductor Company

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Key Features

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Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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TSM9966D 20v dual n-channel mosfet by Taiwan Semiconductor Company - Datasheet Preview

Datasheet Details

Part number	TSM9966D
Manufacturer	Taiwan Semiconductor Company
File Size	402.82 KB
Description	20V Dual N-Channel MOSFET
Datasheet	TSM9966D Datasheet

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TSM9966D 20V Dual N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 30 @ VGS = 4.5V 40 @ VGS = 2.5V SOT-26 Pin Definition: 1. Gate 1 6. Source 1 2. Drain 5. Drain 3. Gate 2 4. Source 2 ID (A) 6.0 5.2 Features ● Advance www.DataSheet4U.com ● Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Specially Designed for Li-on Battery Packs Battery Switch Application Ordering Information Part No.