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TSM9926D
Taiwan Semiconductor
Dual N-Channel Power MOSFET
20V, 6.0A, 30mΩ
FEATURES
● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-
resistance
APPLICATION
● Specially Designed for Li-on Battery Packs ● Battery Switch Application
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VDS
RDS(on) (max)
VGS = 4.5V VGS = 2.5V
Qg
20 30 40 4.86
V mΩ nC
SOP-8
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2)
TC = 25°C
Continuous Source Current (Diode Conduction)
Total Power Dissipation
TA = 25°C TA = 75°C
VDS VGS ID IDM IS
PDTOT
20 ±12
6 30 1.7 1.6 1.
TSM9926D Datasheet
