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TSM3911D - 20V Dual N-Channel MOSFET

Key Features

  • Advance Trench Process Technology.
  • High Density Cell Design for Ultra Low On-resistance Ordering Information Block Diagram Part No. Package Packing TSM3911DCX6 RF SOT-26 3kpcs / 7” Reel TSM3911DCX6 RFG SOT-26 3kpcs / 7” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain.

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Datasheet Details

Part number TSM3911D
Manufacturer Taiwan Semiconductor Company
File Size 240.49 KB
Description 20V Dual N-Channel MOSFET
Datasheet download datasheet TSM3911D Datasheet

Full PDF Text Transcription for TSM3911D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TSM3911D. For precise diagrams, and layout, please refer to the original PDF.

TSM3911D 20V Dual P-Channel MOSFET SOT-26 Pin Definition: 1. Gate 1 6. Drain 1 2. Source 2 5. Source 1 3. Gate 2 4. Drain 2 Key Parameter Performance Parameter Value VDS ...

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1 3. Gate 2 4. Drain 2 Key Parameter Performance Parameter Value VDS VGS = -4.5V RDS(on) (max) VGS = -2.5V VGS = -1.8V -20 140 200 300 Qg 15.23 Unit V mΩ nC Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Ordering Information Block Diagram Part No.

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