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TSM3900D - 20V Dual N-Channel MOSFET

Key Features

  • Advance Trench Process Technology.
  • High Density Cell Design for Ultra Low On-resistance Block Diagram.

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Datasheet Details

Part number TSM3900D
Manufacturer Taiwan Semiconductor Company
File Size 325.40 KB
Description 20V Dual N-Channel MOSFET
Datasheet download datasheet TSM3900D Datasheet

Full PDF Text Transcription for TSM3900D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TSM3900D. For precise diagrams, and layout, please refer to the original PDF.

TSM3900D 20V Dual N-Channel MOSFET SOT-26 Pin Definition: 1. Gate 1 6. Drain 1 2. Source 2 5. Source 1 3. Gate 2 4. Drain 2 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 55 @ VGS =...

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1 3. Gate 2 4. Drain 2 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 55 @ VGS = 4.5V 20 70 @ VGS = 2.5V 110 @ VGS = 1.8V Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● Load Switch ● PA Switch Ordering Information ID (A) 2.0 1.5 1.0 Part No.

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