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TSM3462 - 20V N-Channel MOSFET

General Description

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Key Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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Datasheet Details

Part number TSM3462
Manufacturer Taiwan Semiconductor Company
File Size 421.58 KB
Description 20V N-Channel MOSFET
Datasheet download datasheet TSM3462 Datasheet

Full PDF Text Transcription for TSM3462 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TSM3462. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com TSM3462 20V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 33 @ VGS = 4.5V 20 40 @ VGS = 2.5V 51 @ VGS = 1.8V SOT-26 Pin Definition: 1. Drain 6....

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20 40 @ VGS = 2.5V 51 @ VGS = 1.8V SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source ID (A) 5.0 4.5 4.0 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No. TSM3462CX6 RF Package SOT-26 Packing 3Kpcs / 7” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.

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