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TSM3460 - 20V N-Channel MOSFET

Key Features

  • Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch.

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Datasheet Details

Part number TSM3460
Manufacturer Taiwan Semiconductor Company
File Size 196.47 KB
Description 20V N-Channel MOSFET
Datasheet download datasheet TSM3460 Datasheet

Full PDF Text Transcription for TSM3460 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TSM3460. For precise diagrams, and layout, please refer to the original PDF.

TSM3460 Pin assignment: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source www.DataSheet4U.com 20V N-Channel MOSFET w/ESD Protected VDS = 20V RDS (on), Vgs @ 4.5V, Ids...

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V N-Channel MOSFET w/ESD Protected VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 6A =22mΩ (typ.) RDS (on), Vgs @ 2.5V, Ids @ 5A =30mΩ (typ.) Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch application Block Diagram Ordering Information Part No. TSM3460CX6 Packing Tape & Reel 3,000/per reel Package SOT-26 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Ta = 25 C Ta = 70 oC Pulsed D

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