T35L6432B - 64K x 32 SRAM

Product Overview

Taiwan Memory Technology

Datasheet Details

Part number	T35L6432B
Manufacturer	Taiwan Memory Technology
File Size	159.00 KB
Description	64K x 32 SRAM
Datasheet	T35L6432B Datasheet
Additional preview pages of the T35L6432B datasheet.

Product details

Description

The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology.

Features

Fast Access times: 9 / 10 / 11 / 12 ns.
Single 3.3V (+0.3V/-0.165V) power supply.
Common data inputs and data outputs.
Individual BYTE WRITE ENABLE and GLOBAL WRITE control.
Three chip enables for depth expansion and address pipelining.
Clock-controlled and registered address, data I/Os and control signals.
Internally self-timed WRITE CYCLE.
Burst control pins ( interleaved or linear burst sequence).
High 30pF outp.

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Other Datasheets by Taiwan Memory Technology

T35L6432A - 64K x 32 SRAM
T35L6464A - 64K x 64 SRAM
T35L3232B - 32K x 32 SRAM

Published: Jan 26, 2006 |